Growth of InGaN alloy on cubic GaN by metalorganic vapor-phase epitaxy

被引：0
|
作者：
Nakadaira, A [1 ]
Tanaka, H [1 ]
机构：
[1] Nippon Telegraph & Tel Corp, Cyber Space Labs, Musashino, Tokyo 1808585, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1999年 / 176卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-396X(199911)176:1<529::AID-PSSA529>3.0.CO;2-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cubic InGaN alloys were grown on cubic GaN/GaAs (100) using low-pressure metalorganic vapor-phase epitaxy. A high-resolution cross-sectional transmission electron microscope image revealed their cubic crystal structure. In0.03Ga0.97N grown at 770 degrees C showed near band edge emission at 3.12 eV and its peak width was 110 meV at room temperature. The indium molar fraction tended to decrease when the growth temperature increased above 720 degrees C It also decreased as the NH3 flow rate decreased. The lowest energy of the near-band edge emission of these InGaN alloys at room temperature was 2.98 eV.
引用
收藏
页码：529 / 534
页数：6
相关论文
共 50 条
  • [1] Cubic GaN light emitting diode grown by metalorganic vapor-phase epitaxy
    Tanaka, H
    Nakadaira, A
    IEICE TRANSACTIONS ON ELECTRONICS, 2000, E83C (04): : 585 - 590
  • [2] Cubic GaN light emitting diode grown by metalorganic vapor-phase epitaxy
    Tanaka, Hidenao
    Nakadaira, Atsushi
    2000, IEICE of Japan, Tokyo, Japan (E83-C)
  • [3] SELECTIVE GROWTH OF CUBIC GAN IN SMALL AREAS ON PATTERNED GAAS(100) SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY
    NAGAHARA, M
    MIYOSHI, S
    YAGUCHI, H
    ONABE, K
    SHIRAKI, Y
    ITO, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 694 - 697
  • [4] Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth
    Inatomi, Yuya
    Kangawa, Yoshihiro
    Ito, Tomonori
    Suski, Tadeusz
    Kumagai, Yoshinao
    Kakimoto, Koichi
    Koukitu, Akinori
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (07)
  • [5] THE HOMOEPITAXY OF GAN BY METALORGANIC VAPOR-PHASE EPITAXY USING GAN SUBSTRATES
    DETCHPROHM, T
    HIRAMATSU, K
    SAWAKI, N
    AKASAKI, I
    JOURNAL OF CRYSTAL GROWTH, 1994, 137 (1-2) : 170 - 174
  • [6] Optical transitions in cubic GaN grown on GaAs(100) substrates by metalorganic vapor-phase epitaxy
    Wu, J
    Yaguchi, H
    Onabe, K
    Ito, R
    Shiraki, Y
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 415 - 419
  • [7] Thermodynamic study in GaN grown by metalorganic vapor-phase epitaxy
    Zhang, GY
    Tong, YZ
    Jin, SX
    Dang, XZ
    Yang, ZJ
    BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 394 - 397
  • [8] Metalorganic vapor-phase epitaxy of GaN from trimethylgallium and tertiarybutylhydrazine
    Hsu, YJ
    Hong, LS
    Tsay, JE
    JOURNAL OF CRYSTAL GROWTH, 2003, 252 (1-3) : 144 - 151
  • [9] The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy
    Liu, XL
    Lu, DC
    Wang, LS
    Wang, XH
    Wang, D
    Lin, LY
    JOURNAL OF CRYSTAL GROWTH, 1998, 193 (1-2) : 23 - 27
  • [10] SPIRAL GROWTH OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    HSU, CC
    LU, YC
    XU, JB
    WILSON, IH
    APPLIED PHYSICS LETTERS, 1994, 64 (15) : 1959 - 1961
12345