Measurement of single interface trap capture cross sections with charge pumping

被引：21
|
作者：
Saks, NS
机构：
[1] Naval Research Laboratory, Code 6813, Washington
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 25期
关键词：
D O I：
10.1063/1.119177
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A technique has been developed using charge pumping to determine electron and hole capture cross sections of individual interface traps in small silicon metal-oxide-semiconductor transistors. Values for both cross sections are approximate to 10(-16) cm(2) for the particular trap measured. (C) 1997 American Institute of Physics.
引用
收藏
页码：3380 / 3382
页数：3
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