Effects of electrical stress on mid-gap interface trap density and capture cross sections in n-MOSFETs characterized by pulsed interface probing measurements

High field electrical stress effects on the mid-gap interface trap density (D-iT0) and geometric mean capture cross sections (sigma(0)) in n-MOSFETs have been studied using the pulsed interface probing method. The results show that the PIP technique is sensitive to changes in mid-gap trap cross section values caused by the Fowler-Nordheim (F-N) electrical stress. The decrease of mid-gap trap cross sections following the F-N tunneling injection is found. Our works also provide further insight into the influence of electrical stress on mid-gap interface trap generation in n-MOSFETs without the assumption of the constant capture cross section value during F-N stresses. (C) 2003 Elsevier Ltd. All rights reserved.