Influence of an electric field on the operation of terahertz intracenter silicon lasers

被引：4
|
作者：
Pavlov, S. G. [1 ]
Boettger, U. [1 ]
Abrosimov, N. V. [2 ]
Irmscher, K. [2 ]
Riemann, H. [2 ]
Huebers, H. -W. [1 ,3 ]
机构：
[1] German Aerosp Ctr DLR, Inst Planetary Res, D-12489 Berlin, Germany
[2] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany
[3] Tech Univ Berlin, Inst Opt & Atomare Phys, D-10623 Berlin, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 03期
关键词：
optical phase locked loops; optical tuning; terahertz wave generation; ELECTROLUMINESCENCE; EMISSION; DONORS;
D O I：
10.1063/1.3305807
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the influence of a pulsed electric field on the intracenter population inversion between phosphorus donor states in silicon. Terahertz-range electroluminescence resulted from the populated excited donor states. It grows linearly above the impurity breakdown field but saturates at excitation powers exceeding 100 W at 5 mu s pulse length. An electric field applied to the optically pumped silicon laser reduces the efficiency of the 2p(0)-> 1s(T-2) phosphorus transition already at voltages below the impurity breakdown. The appearance of a current through the laser sample results in a fast quenching of the laser emission that indicates a reduction in the inversed population between the laser states.
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页数：5
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