Influence of an electric field on the operation of terahertz intracenter silicon lasers

被引：4

作者：

Pavlov, S. G. ^{[1
]}

Boettger, U. ^{[1
]}

Abrosimov, N. V. ^{[2
]}

Irmscher, K. ^{[2
]}

Riemann, H. ^{[2
]}

Huebers, H. -W. ^{[1
,3
]}

机构：

[1] German Aerosp Ctr DLR, Inst Planetary Res, D-12489 Berlin, Germany

[2] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany

[3] Tech Univ Berlin, Inst Opt & Atomare Phys, D-10623 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 03期

关键词：

optical phase locked loops; optical tuning; terahertz wave generation; ELECTROLUMINESCENCE; EMISSION; DONORS;

D O I：

10.1063/1.3305807

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the influence of a pulsed electric field on the intracenter population inversion between phosphorus donor states in silicon. Terahertz-range electroluminescence resulted from the populated excited donor states. It grows linearly above the impurity breakdown field but saturates at excitation powers exceeding 100 W at 5 mu s pulse length. An electric field applied to the optically pumped silicon laser reduces the efficiency of the 2p(0)-> 1s(T-2) phosphorus transition already at voltages below the impurity breakdown. The appearance of a current through the laser sample results in a fast quenching of the laser emission that indicates a reduction in the inversed population between the laser states.

引用

页数：5

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