Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs

被引：7
|
作者：
Jaksic, AB [1 ]
Pejovic, MM [1 ]
Ristic, GS [1 ]
机构：
[1] Univ Nish, Fac Elect Engn, YU-18000 Nish, Yugoslavia
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 03期
关键词：
D O I：
10.1109/23.856495
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper presents results of a study of post-irradiation effects in two types of gamma-ray irradiated power VDMOSFETs, commercially available from different manufacturers. Isothermal annealing with constant and switching gate bias, as well as isochronal annealing have been performed. The application of charge-pumping measurements in commercial three-terminal VDMOSFETs is also discussed. Besides enabling insight into the post-irradiation response of investigated devices, obtained results point out some interesting post-irradiation phenomena.
引用
收藏
页码：659 / 666
页数：8
相关论文
共 50 条
  • [41] Isochronal annealing studies of the oxygen-vacancy centres in neutron-irradiated Si
    Londos, CA
    Sarlis, NV
    Fytros, LG
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 163 (02): : 325 - 335
  • [42] ISOCHRONAL ANNEALING STUDY ON N-IRRADIATED SINGLE-CRYSTALS AND POLYCRYSTALS OF MO
    NAIDU, SV
    GUPTA, AS
    SEN, P
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1985, 52 (06): : 801 - 810
  • [43] CRYSTALLIZATION BEHAVIOR OF AL85Y10NI5 BY ISOCHRONAL AND ISOTHERMAL ANNEALING
    KWONG, V
    KOO, YC
    THORPE, SJ
    AUST, KT
    ACTA METALLURGICA ET MATERIALIA, 1991, 39 (07): : 1563 - 1570
  • [44] Studies of isochronal and isothermal annealing of alpha particle tracks in CR-39 polymer detectors
    Universidade Federal Fluminense, Rio de Janeiro, Brazil
    Nucl Instrum Methods Phys Res Sect B, 1-2 (104-110):
  • [45] Studies of isochronal and isothermal annealing of alpha particle tracks in CR-39 polymer detectors
    Pinheiro, JD
    DaSilva, AX
    Santos, RC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 111 (1-2): : 104 - 110
  • [46] Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs
    Djoric-Vejkovic, S
    Manic, I
    Davidovic, V
    Golubovic, S
    Stojadinovic, N
    MICROELECTRONICS RELIABILITY, 2003, 43 (9-11) : 1455 - 1460
  • [47] An isochronal annealing study of the kinetics of VO and VO2 defects in neutron irradiated Si
    Londos, CA
    Sarlis, NV
    Fytros, LG
    EARLY STAGES OF OXYGEN PRECIPITATION IN SILICON, 1996, 17 : 477 - 484
  • [48] Prediction of long-term thermal behavior of an irradiated SRAM based on isochronal annealing measurements
    Saigné, F
    Quittard, O
    Dusseau, L
    Joffre, F
    Oudéa, C
    Fesquet, J
    Gasiot, J
    MICROELECTRONICS RELIABILITY, 2002, 42 (03) : 459 - 461
  • [49] STUDY OF ISOCHRONAL ANNEALING BEHAVIOR OF NEUTRON IRRADIATED HYDROGEN FZ SILICON BY POSITRON ANNIHILATION.
    Xiong Xingmin
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1986, 7 (01): : 78 - 84
  • [50] ISOCHRONAL ANNEALING EFFECTS ON THE YIELD STRESS OF ELECTRON-IRRADIATED COPPER SINGLE-CRYSTALS
    YOSHIZAWA, I
    KAMADA, K
    NARAMOTO, H
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 46 (06) : 1961 - 1962
12345