Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs

被引：7
|
作者：
Jaksic, AB [1 ]
Pejovic, MM [1 ]
Ristic, GS [1 ]
机构：
[1] Univ Nish, Fac Elect Engn, YU-18000 Nish, Yugoslavia
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 03期
关键词：
D O I：
10.1109/23.856495
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper presents results of a study of post-irradiation effects in two types of gamma-ray irradiated power VDMOSFETs, commercially available from different manufacturers. Isothermal annealing with constant and switching gate bias, as well as isochronal annealing have been performed. The application of charge-pumping measurements in commercial three-terminal VDMOSFETs is also discussed. Besides enabling insight into the post-irradiation response of investigated devices, obtained results point out some interesting post-irradiation phenomena.
引用
收藏
页码：659 / 666
页数：8
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