22nm CMOS Approaches by PVD TiN or Ti-Silicide as Metal Gate

被引：1

作者：

Liu, C. S. ^{[1
]}

Boccardi, G. ^{[2
]}

Wang, H. Y. ^{[1
]}

Lin, C. T. ^{[1
]}

Petry, J. ^{[2
]}

Mueller, M. ^{[2
]}

Li, Z. ^{[3
]}

Zhao, C. ^{[3
]}

Yu, C. H. ^{[1
]}

机构：

[1] TSMC, 8,Li Hsin Rd 6,Hsinchu Sci Pk, Hsinchu 30077, Taiwan

[2] NXP TSMC Res Ctr, Eindhoven, Netherlands

[3] IMEC, Leuven, Belgium

来源：

PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS | 2009年

关键词：

D O I：

10.1109/VTSA.2009.5159292

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：63 / +

页数：2

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