Silicon oxide films from the Plasmodul®

被引：33
|
作者：
Walker, M
Baumgärtner, KM
Feichtinger, J
Kaiser, M
Schulz, A
Räuchle, E
机构：
[1] Univ Stuttgart, Inst Plasmaforsch, D-70569 Stuttgart, Germany
[2] Fraunhofer Inst Chem Technol, D-76327 Pfinztal, Germany
来源：
VACUUM | 2000年 / 57卷 / 04期
关键词：
microwave plasma source; plasma deposition; silicon oxide films; hexamethyldisiloxane;
D O I：
10.1016/S0042-207X(00)00152-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Gas mixtures of hexamethyldisiloxane (HMDSO) and oxygen (O(2)) are used for plasma-enhanced chemical vapour deposition of silicon oxide films. These films were deposited in a newly developed plasma reactor, called Plasmodul(R) The plasma is excited by 2.45 GHz microwaves in the pressure range of 0.05-200 mbar. The Plasmodul is a modular device consisting of a plasma source, a gas inlet system, a reaction and substrate chamber and a diagnostic port. It is a flexible equipment, comfortable in handling and simple in construction. The special arrangement allows a film deposition remote from the plasma source. The chemical composition of the films was investigated in dependence on the HMDSO:O(2) monomer mixture ratio by Fourier-transform infrared spectroscopy. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：387 / 397
页数：11
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