Silicon oxide films from the Plasmodul®

被引：33
|
作者：
Walker, M
Baumgärtner, KM
Feichtinger, J
Kaiser, M
Schulz, A
Räuchle, E
机构：
[1] Univ Stuttgart, Inst Plasmaforsch, D-70569 Stuttgart, Germany
[2] Fraunhofer Inst Chem Technol, D-76327 Pfinztal, Germany
来源：
VACUUM | 2000年 / 57卷 / 04期
关键词：
microwave plasma source; plasma deposition; silicon oxide films; hexamethyldisiloxane;
D O I：
10.1016/S0042-207X(00)00152-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Gas mixtures of hexamethyldisiloxane (HMDSO) and oxygen (O(2)) are used for plasma-enhanced chemical vapour deposition of silicon oxide films. These films were deposited in a newly developed plasma reactor, called Plasmodul(R) The plasma is excited by 2.45 GHz microwaves in the pressure range of 0.05-200 mbar. The Plasmodul is a modular device consisting of a plasma source, a gas inlet system, a reaction and substrate chamber and a diagnostic port. It is a flexible equipment, comfortable in handling and simple in construction. The special arrangement allows a film deposition remote from the plasma source. The chemical composition of the films was investigated in dependence on the HMDSO:O(2) monomer mixture ratio by Fourier-transform infrared spectroscopy. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：387 / 397
页数：11
相关论文
共 50 条
  • [31] ELECTROLUMINESCENCE OF SILICON-OXIDE FILMS
    MIKHO, VV
    FIZIKA TVERDOGO TELA, 1975, 17 (06): : 1833 - 1835
  • [32] STRUCTURE OF OXIDE-FILMS ON SILICON
    MOGILEVTSEV, PK
    GUSEVA, NS
    ARSLAMBEKOV, VA
    KRISTALLOGRAFIYA, 1978, 23 (02): : 437 - &
  • [33] ARXPS analysis of silicon oxide films
    Negrila, C. C.
    Cotirlan, C.
    Ungureanu, F.
    Logofatu, C.
    Lazarescu, R. V. Ghita M. F.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2008, 10 (06): : 1379 - 1383
  • [34] Anodic oxide films on silicon carbide
    Lilov, S. K.
    CRYSTAL RESEARCH AND TECHNOLOGY, 2007, 42 (11) : 1054 - 1057
  • [35] Preparation of oxide films from solutions of silicon, aluminum, and titanium alkoxides
    Yablokova, N.V.
    Aleksandrov, Yu.A.
    1998, Maik Nauka-Interperiodica Publishing (71)
  • [36] Preparation of oxide films from solutions of silicon, aluminum, and titanium alkoxides
    Yablokova, NV
    Aleksandrov, YA
    RUSSIAN JOURNAL OF APPLIED CHEMISTRY, 1998, 71 (03) : 497 - 500
  • [37] Photoluminescence from amorphous silicon oxide films prepared by HFCVD technique
    Salazar, P
    Chávez, F
    Silva-Andrade, F
    Ilinskii, AV
    Morales, N
    Peña-Sierra, R
    MODERN PHYSICS LETTERS B, 2001, 15 (17-19): : 756 - 759
  • [38] Study of Diffusion of Gallium from Doped Oxide Films into Silicon.
    Danilicheva, T.A.
    Markvicheva, V.S.
    Nisnevich, Ya.D.
    Neorganiceskie materialy, 1985, 21 (04): : 525 - 529
  • [39] Visible luminescence from C-containing silicon oxide films
    SendovaVassileva, M
    Tzenov, N
    DimovaMalinovska, D
    Marinova, T
    Krastev, V
    THIN SOLID FILMS, 1996, 276 (1-2) : 318 - 322
  • [40] Silicon nanocrystal formation in silicon rich silicon oxide thin films
    Roschuk, T
    Wojcik, J
    Irving, EA
    Flynn, M
    Mascher, P
    APPLICATIONS OF PHOTONIC TECHNOLOGY, CLOSING THE GAP BETWEEN THEORY, DEVELOPMENT, AND APPLICATION, PT 1 AND 2, 2004, 5577 : 450 - 458
12345