Operation of Multi-Level Phase Change Memory Using Various Programming Techniques

被引：9

作者：

Lin, Jun-Tin ^{[1
]}

Liao, Yi-Bo ^{[2
]}

Chiang, Meng-Hsueh ^{[1
]}

Hsu, Wei-Chou ^{[2
]}

机构：

[1] Natl Ilan Univ, Dept Elect Engn, Taipei, Taiwan

[2] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan

来源：

2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS | 2009年

关键词：

Phase change memory (PCM); multi-level cell (MLC);

D O I：

10.1109/ICICDT.2009.5166295

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we evaluate the writing operation of multi-level phase change memory by using different programming techniques including proposed monotonically increasing and decreasing pulse, constant pulse, and slow quenching schemes. Our simulation results suggest that the proposed multi-level cell schemes not only have an advantage in density but also consume less power during writing operation.

引用

页码：199 / +

页数：2

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