Operation of Multi-Level Phase Change Memory Using Various Programming Techniques

被引：9
|
作者：
Lin, Jun-Tin [1 ]
Liao, Yi-Bo [2 ]
Chiang, Meng-Hsueh [1 ]
Hsu, Wei-Chou [2 ]
机构：
[1] Natl Ilan Univ, Dept Elect Engn, Taipei, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan
来源：
2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS | 2009年
关键词：
Phase change memory (PCM); multi-level cell (MLC);
D O I：
10.1109/ICICDT.2009.5166295
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we evaluate the writing operation of multi-level phase change memory by using different programming techniques including proposed monotonically increasing and decreasing pulse, constant pulse, and slow quenching schemes. Our simulation results suggest that the proposed multi-level cell schemes not only have an advantage in density but also consume less power during writing operation.
引用
收藏
页码：199 / +
页数：2
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