A Method to Estimate the Junction Temperature of Photodetectors Operating at High Photocurrent

被引：22
|
作者：
Chen, Hao [1 ]
Beling, Andreas [1 ]
Pan, Huapu [1 ]
Campbell, Joe C. [1 ]
机构：
[1] Univ Virginia, Dept Elect & Comp Engn, Sch Engn & Appl Sci, Charlottesville, VA 22904 USA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2009年 / 45卷 / 12期
关键词：
InGaAs; photodiode (PD); photodetector; POWER; PHOTODIODES; TRANSITIONS;
D O I：
10.1109/JQE.2009.2023609
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A method to estimate the junction temperature while operating at high photocurrent levels is presented. The relative responsivity change is measured at high operating current. Using a model for the temperature-dependence of the bandgap, a relation between the relative change in the output power and the internal junction temperature is derived. Good agreement between experimental data and simulations is achieved.
引用
收藏
页码：1537 / 1541
页数：5
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