A Method to Estimate the Junction Temperature of Photodetectors Operating at High Photocurrent

被引：22

作者：

Chen, Hao ^{[1
]}

Beling, Andreas ^{[1
]}

Pan, Huapu ^{[1
]}

Campbell, Joe C. ^{[1
]}

机构：

[1] Univ Virginia, Dept Elect & Comp Engn, Sch Engn & Appl Sci, Charlottesville, VA 22904 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2009年 / 45卷 / 12期

关键词：

InGaAs; photodiode (PD); photodetector; POWER; PHOTODIODES; TRANSITIONS;

D O I：

10.1109/JQE.2009.2023609

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method to estimate the junction temperature while operating at high photocurrent levels is presented. The relative responsivity change is measured at high operating current. Using a model for the temperature-dependence of the bandgap, a relation between the relative change in the output power and the internal junction temperature is derived. Good agreement between experimental data and simulations is achieved.

引用

页码：1537 / 1541

页数：5

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