Update of Development Progress of the High Power LPP-EUV Light Source Using a Magnetic Field

被引:4
|
作者
Kouge, Kouichiro [1 ]
Nagai, Shinji [1 ]
Hori, Tsukasa [1 ]
Ueno, Yoshifumi [1 ]
Yanagida, Tatsuya [1 ]
Miyao, Kenichi [1 ]
Hayashi, Hideyuki [1 ]
Watanabe, Yukio [1 ]
Abe, Tamotsu [1 ]
Nakarai, Hiroaki [1 ]
Saito, Takashi [1 ]
Mizoguchi, Hakaru [1 ]
机构
[1] Gigaphoton Inc, 3-25-1 Shinomiya, Hiratsuka, Kanagawa 2548555, Japan
关键词
EUV light source; EUV lithography; Laser produced plasma; Debris mitigation;
D O I
10.2494/photopolymer.33.37
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Gigaphoton Inc. has been developing a CO2-Sn-LPP (LPP: Laser Produced Plasma) extreme ultraviolet (EUV) light source system for high-volume manufacturing (HVM) semiconductor lithography. Key components of the source include a high-power CO2 laser with 15 ns pulse duration and 100 kHz repetition frequency, a solid-state pre-pulse laser with 10 ps pulse duration, a high speed Sn-droplet generator, a high-speed and high accuracy shooting system, and a magnetic field debris mitigation system. To achieve an in-band power of 330 W with long collector mirror lifetime and stable output, we improved the performance of key system components. We achieved an in-band power of 250 W under DC operation and demonstrated a power scalability up to 330 W. This paper presents the key technology update of our EUV light source.
引用
收藏
页码:37 / 44
页数:8
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