Operation characteristics of Poly-Si nanowire charge-trapping flash memory devices with SiGe and Ge buried channels

被引：2

作者：

Fang, Hsin-Kai ^{[1
]}

Chang-Liao, Kuei-Shu ^{[1
]}

Huang, Chien-Pang ^{[1
]}

Lee, Wei-Zhi ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu, Taiwan

来源：

VACUUM | 2017年 / 140卷

关键词：

Ge buried channel; Poly-Si; Nanowire; Charge-trapping flash memory device; ERASING SPEEDS;

D O I：

10.1016/j.vacuum.2016.12.042

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Operation characteristics of polycrystalline silicon (poly-Si) nanowire (NW) charge-trapping (CT) flash memory devices with a SiGe and a Ge buried channel are studied and compared in this work. The poly-Si NW devices with a Ge buried channel show faster programming and erasing speeds as compared to those with a SiGe one due to a lower energy barrier in tunneling layer with more Ge composition. The retention and endurance characteristics of devices with a Ge buried channel are similar to those with a SiGe one. Ge buried channel is promising to CI' flash device for 3D nonvolatile memory applications. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：53 / 57

页数：5

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