1.3 μm tunable quantum dot lasers

被引：0
|
作者：
Wan, Yating [1 ]
Zhang, Sen [2 ]
Norman, Justin [3 ]
Kennedy, M. J. [4 ]
He, William [4 ]
Tong, Yeyu [4 ,5 ]
Shang, Chen [3 ]
He, Jian-Jun [2 ]
Tsang, Hon Ki [5 ]
Gossard, Arthur C. [1 ,3 ]
Bowers, John E. [1 ,3 ,4 ]
机构：
[1] Univ Calif Santa Barbara, Inst Energy Efficiency, Santa Barbara, CA 93106 USA
[2] Zhejiang Univ, Coll Opt Sci & Engn, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Peoples R China
[3] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA
[4] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[5] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China
来源：
2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2020年
基金：
中国国家自然科学基金;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the first directly modulated single-mode tunable quantum dot lasers at 1.3 mu m. 27-channel wavelength switching was achieved with side-mode-suppression-ratio of around 35 dB without requiring nonuniform gratings or epitaxial regrowth. (C) 2020 The Author(s)
引用
收藏
页数：2
相关论文
共 50 条
  • [41] The influence of p-doping on the temperature sensitivity of 1.3μm quantum dot lasers
    Massé, NF
    Marko, IP
    Sweeney, SJ
    Adams, AR
    Hatori, N
    Sugarawa, M
    2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS), 2005, : 603 - 604
  • [42] Performance of 1.3-μm InGaAs/GaAs quantum-dot lasers and their physics
    Sugawara, M
    Mukai, K
    Nakata, Y
    Ishilkawa, H
    LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2, 2000, : 123 - 124
  • [43] Lasing and spontaneous emission characteristics of 1.3 μm In(Ga)As quantum-dot lasers
    Sellers, IR
    Liu, HY
    Badcock, TJ
    Groom, KM
    Mowbray, DJ
    Gutiérrez, M
    Hopkinson, M
    Skolnick, MS
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 26 (1-4): : 382 - 385
  • [44] Carrier Relaxation and Modulation Response of 1.3-μm InAsGaAs Quantum Dot Lasers
    Tong, Cunzhu
    Xu, Dawei
    Yoon, Soon Fatt
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2009, 27 (23) : 5442 - 5450
  • [45] GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report
    M. V. Maximov
    N. N. Ledentsov
    V. M. Ustinov
    Zh. I. Alferov
    D. Bimberg
    Journal of Electronic Materials, 2000, 29 : 476 - 486
  • [46] Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon
    Hantschmann, Constanze
    Vasil'ev, Peter P.
    Chen, Siming M.
    Liao, Mengya
    Seeds, Alwyn J.
    Liu, Huiyun
    Penty, Richard V.
    White, Ian H.
    2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC), 2018, : 139 - 140
  • [47] Spontaneous emission study on 1.3 μm InAs/InGaAs/GaAs quantum dot lasers
    Liu, C. Y.
    Stubenrauch, M.
    Bimberg, D.
    NANOTECHNOLOGY, 2011, 22 (23)
  • [48] InAs/GaAs quantum dot laterally coupled distributed feedback lasers at 1.3 μm
    Yu, Wenfu
    Zhao, Xuyi
    Han, Shixian
    Du, Antian
    Liu, Ruotao
    Cao, Chunfang
    Yan, Jinyi
    Yang, Jin
    Huang, Hua
    Wang, Hailong
    Gong, Qian
    CHINESE OPTICS LETTERS, 2023, 21 (01)
  • [49] High Performance 1.3μm InAs Quantum Dot Lasers Epitaxially Grown on Silicon
    Liu, Alan Y.
    Zhang, Chong
    Snyder, Andrew
    Lubychev, Dimitri
    Fastenau, Joel M.
    Liu, Amy W. K.
    Gossard, Arthur C.
    Bowers, John E.
    2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC), 2014,
  • [50] Phase-locked mutually coupled 1.3 μm quantum-dot lasers
    Hegarty, Stephen P.
    Goulding, David
    Kelleher, Bryan
    Huyet, Guillaume
    Todaro, Maria-Teresa
    Salhi, Abdelmajid
    Passaseo, Adriana
    De Vittorio, Massimo
    OPTICS LETTERS, 2007, 32 (22) : 3245 - 3247
12345