1.3 μm tunable quantum dot lasers

被引:0
|
作者
Wan, Yating [1 ]
Zhang, Sen [2 ]
Norman, Justin [3 ]
Kennedy, M. J. [4 ]
He, William [4 ]
Tong, Yeyu [4 ,5 ]
Shang, Chen [3 ]
He, Jian-Jun [2 ]
Tsang, Hon Ki [5 ]
Gossard, Arthur C. [1 ,3 ]
Bowers, John E. [1 ,3 ,4 ]
机构
[1] Univ Calif Santa Barbara, Inst Energy Efficiency, Santa Barbara, CA 93106 USA
[2] Zhejiang Univ, Coll Opt Sci & Engn, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Peoples R China
[3] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA
[4] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[5] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the first directly modulated single-mode tunable quantum dot lasers at 1.3 mu m. 27-channel wavelength switching was achieved with side-mode-suppression-ratio of around 35 dB without requiring nonuniform gratings or epitaxial regrowth. (C) 2020 The Author(s)
引用
收藏
页数:2
相关论文
共 50 条
  • [31] 35 GHz mode-locking of 1.3 μm quantum dot lasers
    Kuntz, M
    Fiol, G
    Lämmlin, M
    Bimberg, D
    Thompson, MG
    Tan, KT
    Marinelli, C
    Penty, RV
    White, IH
    Ustinov, VM
    Zhukov, AE
    Shernyakov, YM
    Kovsh, AR
    APPLIED PHYSICS LETTERS, 2004, 85 (05) : 843 - 845
  • [32] High performance continuous wave 1.3 μm quantum dot lasers on silicon
    Liu, Alan Y.
    Zhang, Chong
    Norman, Justin
    Snyder, Andrew
    Lubyshev, Dmitri
    Fastenau, Joel M.
    Liu, Amy W. K.
    Gossard, Arthur C.
    Bowers, John E.
    APPLIED PHYSICS LETTERS, 2014, 104 (04)
  • [33] 1.3 μm InAs/GaAs Quantum Dot Lasers on SOI Waveguide Structures
    Tanabe, Katsuaki
    Arakawa, Yasuhiko
    2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2014,
  • [34] 1.3 μm GaAs-based quantum well and quantum dot lasers: Comparative analysis
    A. Yu. Egorov
    A. E. Zhukov
    V. M. Ustinov
    Journal of Electronic Materials, 2001, 30 : 477 - 481
  • [35] 1.3 μm GaAs-based quantum well and quantum dot lasers:: Comparative analysis
    Egorov, AY
    Zhukov, AE
    Ustinov, VM
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (05) : 477 - 481
  • [36] Effect of Be doping in active regions on the performance of 1.3 μm InAs quantum dot lasers
    DU, An-Tian
    Cao, Chun -Fang
    Han, Shi -Xian
    Wang, Hai-Long
    Gong, Qian
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2023, 42 (04) : 450 - 456
  • [37] InAs/GaAs quantum dot laterally coupled distributed feedback lasers at 1.3 μm
    于文富
    赵旭熠
    韩实现
    杜安天
    刘若涛
    曹春芳
    严进一
    杨锦
    黄华
    王海龙
    龚谦
    Chinese Optics Letters, 2023, 21 (01) : 85 - 89
  • [38] GaAs-based 1.3 μm InGaAs quantum dot lasers:: A status report
    Maximov, MV
    Ledentsov, NN
    Ustinov, VM
    Alferov, ZI
    Bimberg, D
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (05) : 476 - 486
  • [39] Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization
    Zenari, Michele
    Buffolo, Matteo
    De Santi, Carlo
    Norman, Justin
    Hughes, Eamonn T.
    Bowers, John E.
    Herrick, Robert
    Meneghesso, Gaudenzio
    Zanoni, Enrico
    Meneghini, Matteo
    ACS PHOTONICS, 2023, 10 (12) : 4188 - 4195
  • [40] High gain and high speed 1.3 μm InAs/InGaAs quantum dot lasers
    Todaro, M. T.
    Salhi, A.
    Fortunato, L.
    Cingolani, R.
    Passaseo, A.
    De Vittorio, M.
    ICTON 2007: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2, 2007, : 264 - +