Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates

被引：39
|
作者：
Wang, S [1 ]
Hurst, JB
Ma, F
Sidhu, R
Sun, X
Zheng, XG
Holmes, AL
Huntington, A
Coldren, LA
Campbell, JC
机构：
[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA
[2] Univ Calif Santa Barbara, Optoelect Technol Ctr, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 12期
关键词：
avalanche excess noise; avalanche multiplication; avalanche photodiode; impact ionization; photodetector; photodiode;
D O I：
10.1109/LPT.2002.804651
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report low noise multiplication region structures designed for avalanche photodiodes grown on InP substrates. By either implementing a single heterostructure or using a pseudograded structure in the multiplication region, better control of spatial distribution of impact-ionization for both injected and feedback carriers can be achieved; localization of the carrier impact ionization process has resulted in very low excess noise.
引用
收藏
页码：1722 / 1724
页数：3
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