Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates

被引：39
|
作者：
Wang, S [1 ]
Hurst, JB
Ma, F
Sidhu, R
Sun, X
Zheng, XG
Holmes, AL
Huntington, A
Coldren, LA
Campbell, JC
机构：
[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA
[2] Univ Calif Santa Barbara, Optoelect Technol Ctr, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 12期
关键词：
avalanche excess noise; avalanche multiplication; avalanche photodiode; impact ionization; photodetector; photodiode;
D O I：
10.1109/LPT.2002.804651
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report low noise multiplication region structures designed for avalanche photodiodes grown on InP substrates. By either implementing a single heterostructure or using a pseudograded structure in the multiplication region, better control of spatial distribution of impact-ionization for both injected and feedback carriers can be achieved; localization of the carrier impact ionization process has resulted in very low excess noise.
引用
收藏
页码：1722 / 1724
页数：3
相关论文
共 50 条
  • [21] Fused InGaAs-Si avalanche photodiodes with low-noise performances
    Kang, Y
    Mages, P
    Clawson, AR
    Yu, PKL
    Bitter, M
    Pan, Z
    Pauchard, A
    Hummel, S
    Lo, YH
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (11) : 1593 - 1595
  • [22] Design considerations for high-speed low-noise avalanche photodiodes
    Ng, BK
    Ng, JS
    Hambleton, PJ
    David, JPR
    Ong, DS
    Rees, GJ
    Tozer, RC
    DESIGN, FABRICATION, AND CHARACTERIZATION OF PHOTONIC DEVICES II, 2001, 4594 : 1 - 9
  • [23] Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging
    Ker, Pin Jern
    Marshall, Andrew R. J.
    Tan, Chee Hing
    David, John P. R.
    2016 IEEE 6TH INTERNATIONAL CONFERENCE ON PHOTONICS (ICP), 2016,
  • [24] Low-noise silicon avalanche photodiodes fabricated in conventional CMOS technologies
    Rochas, A
    Pauchard, AR
    Besse, PA
    Pantic, D
    Prijic, Z
    Popovic, RS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (03) : 387 - 394
  • [25] Low-noise AlGaAsSb avalanche photodiodes for 1550 nm light detection
    Collins, Xiao
    White, Benjamin
    Cao, Ye
    Osman, Tarick
    Taylor-Mew, Jonathan
    Ng, Jo Shien
    Tan, Chee Hing
    OPTICAL COMPONENTS AND MATERIALS XIX, 2022, 11997
  • [26] FREQUENCY RESPONSES OF GRADED-BANDGAP LOW-NOISE AVALANCHE PHOTODIODES
    RAKSHIT, S
    SARIN, R
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (04) : 749 - 752
  • [27] Study on impact ionization in charge layer of InP/InGaAs SAGCM avalanche photodiodes
    Zhang, Shibo
    Zhao, Yanli
    OPTICAL AND QUANTUM ELECTRONICS, 2015, 47 (08) : 2689 - 2696
  • [28] Study on impact ionization in charge layer of InP/InGaAs SAGCM avalanche photodiodes
    Shibo Zhang
    Yanli Zhao
    Optical and Quantum Electronics, 2015, 47 : 2689 - 2696
  • [29] Low noise Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes on InP substrates
    Lee, S.
    Kodati, S. H.
    Guo, B.
    Jones, A. H.
    Schwartz, M.
    Winslow, M.
    Grein, C. H.
    Ronningen, T. J.
    Campbell, J. C.
    Krishna, S.
    APPLIED PHYSICS LETTERS, 2021, 118 (08)
  • [30] Excess noise factor measurement for low-noise high-speed avalanche photodiodes
    Liu, Yijun
    Yang, Xiaohong
    Wang, Rui
    Tang, Yongsheng
    PHYSICA SCRIPTA, 2023, 98 (10)
12345