Light-induced annealing of dangling bonds in a-Si:H

被引：12

作者：

Takeda, K

Hikita, H

Kimura, Y

Yokomichi, H

Yamaguchi, M

Morigaki, K

机构：

[1] MEIKAI UNIV, PHYS LAB, URAYASU, CHIBA 279, JAPAN

[2] TOKAI UNIV, KANAGAWA 25912, JAPAN

[3] TOYAMA PREFECTURAL UNIV, DEPT ELECT & INFORMAT, KOSUGI, TOYAMA 93903, JAPAN

[4] UNIV TOKYO, INST SOLID STATE PHYS, TOKYO 106, JAPAN

[5] HIROSHIMA INST TECHNOL, DEPT ELECT ENGN, SAEKI KU, HIROSHIMA 73151, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 3A期

关键词：

amorphous silicon; dangling bonds; light-induced creation; light-induced annealing; nonradiative recombination; hydrogen diffusion; ESR;

D O I：

10.1143/JJAP.36.991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the kinetics of light-induced defect (dangling bond) creation and annealing processes in a-Si:H containing a large amount of hydrogen at 300 K and 77 K using the ESR technique. We have obtained direct evidence for the light-induced annealing of dangling bonds at 300 K. A model, in which nonradiative recombination of electrons and holes at hydrogen-related dangling bonds is taken into account, is presented to interpret the experimental results.

引用

页码：991 / 996

页数：6

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