Light-induced annealing of dangling bonds in a-Si:H

被引：12
|
作者：
Takeda, K
Hikita, H
Kimura, Y
Yokomichi, H
Yamaguchi, M
Morigaki, K
机构：
[1] MEIKAI UNIV, PHYS LAB, URAYASU, CHIBA 279, JAPAN
[2] TOKAI UNIV, KANAGAWA 25912, JAPAN
[3] TOYAMA PREFECTURAL UNIV, DEPT ELECT & INFORMAT, KOSUGI, TOYAMA 93903, JAPAN
[4] UNIV TOKYO, INST SOLID STATE PHYS, TOKYO 106, JAPAN
[5] HIROSHIMA INST TECHNOL, DEPT ELECT ENGN, SAEKI KU, HIROSHIMA 73151, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 3A期
关键词：
amorphous silicon; dangling bonds; light-induced creation; light-induced annealing; nonradiative recombination; hydrogen diffusion; ESR;
D O I：
10.1143/JJAP.36.991
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the kinetics of light-induced defect (dangling bond) creation and annealing processes in a-Si:H containing a large amount of hydrogen at 300 K and 77 K using the ESR technique. We have obtained direct evidence for the light-induced annealing of dangling bonds at 300 K. A model, in which nonradiative recombination of electrons and holes at hydrogen-related dangling bonds is taken into account, is presented to interpret the experimental results.
引用
收藏
页码：991 / 996
页数：6
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