ESD-induced circuit performance degradation in RFICs

被引：0

作者：

Gong, K ^{[1
]}

Feng, HG ^{[1
]}

Zhan, RY ^{[1
]}

Wang, AZ ^{[1
]}

机构：

[1] IIT, Dept Elect & Comp Engn, Integrated Elect Lab, Chicago, IL 60616 USA

来源：

MICROELECTRONICS RELIABILITY | 2001年 / 41卷 / 9-10期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ESD structures have inevitable parasitic impacts on circuit performance. This paper reports results of an investigation into ESD-induced circuit performance degradation in RFICs including clock corruption, reduced slew rate, narrowed bandwidth, and noise generation. Performance degradation of similar to 80%, similar to 30% & similar to5% were observed in clock, Op Amp and LNA circuits studied, which were recovered substantially by using novel compact ESD structures that are critical to reducing ESD-to-circuit influences while maintaining adequate ESD performance. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1379 / 1383

页数：5

共 50 条

[21] Modeling of ESD-induced confined ignition of solid rocket propellants
Raun, RL
COMBUSTION AND FLAME, 2000, 120 (1-2) : 107 - 124
[22] Repetitive ESD-Induced Electrical Degradation and Optimization for High-Voltage SOI-LIGBT as Output Device
Lu, Li
Zhu, Zhihan
Dai, Yixin
Liu, Siyang
Sun, Weifeng
Zhang, Long
Lin, Feng
Xiao, Jinyu
Sun, Jun
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (09) : 4547 - 4553
[23] On-chip ESD protection for RFICS
Rosenbaum, Elyse
Hyvonen, Sami
RADIO DESIGN IN NANOMETER TECHNOLOGIES, 2006, : 173 - +
[24] Rebamipide solution as a novel submucosal injection promotes healing of ESD-induced ulcer
Fujimoto, Ai
Kiguchi, Yoshiyuki
Mitsunaga, Yutaka
Akimoto, Teppei
Ochiai, Yasutoshi
Maehata, Tadateru
Goto, Osamu
Nishizawa, Toshihiro
Uraoka, Toshio
Yahagi, Naohisa
JOURNAL OF GASTROENTEROLOGY AND HEPATOLOGY, 2016, 31 : 109 - 109
[25] Impact of ESD-induced soft drain junction damage on CMOS product lifetime
Reiner, JC
Keller, T
Jäggi, H
Mira, S
PROCEEDINGS OF THE 2001 8TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 2001, : 77 - 78
[26] Application Level Investigation of System-Level ESD-Induced Soft Failures
Vora, Sandeep
Jiang, Rui
Vasudevan, Shobha
Rosenbaum, Elyse
2016 38TH ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM (EOS/ESD), 2016,
[27] Detection of ESD-Induced Soft Failures by Analyzing Linux Kernel Function Calls
Liu, Xiaorui
Maghlakelidze, Giorgi
Zhou, Jianchi
Izadi, Omid Hoseini
Shen, Li
Pommerenke, Martin
Ge, Shuzhi Sam
Pommerenke, David
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2020, 20 (01) : 128 - 135
[28] Backside interferometric methods for localization of ESD-induced leakage current and metal shorts
Dubec, V.
Bychikhin, S.
Pogany, D.
Gornik, E.
Brodbeck, T.
Stadler, W.
MICROELECTRONICS RELIABILITY, 2007, 47 (9-11) : 1539 - 1544
[29] Impact of ESD-induced sort drain junction damage on CMOS product lifetime
Reiner, JC
Keller, T
Jäggi, H
Mira, S
MICROELECTRONICS RELIABILITY, 2000, 40 (8-10) : 1619 - 1628
[30] A Case Study of Failure Analysis and root cause identification on ESD-induced Breakdown
Liu, Hongmin
Li, Zhe
Weng, Zheng
ISTFA 2016: CONFERENCE PROCEEDINGS FROM THE 42ND INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, 2016, : 291 - 293

← 1 2 3 4 5 →