Investigations on double-diffused MOS transistors under ESD zap conditions

被引：6
|
作者：
Boselli, G
Meeuwsen, S
Mouthaan, T
Kuper, F
机构：
[1] Univ Twente, Dept Elect Engn, MESAPlus Res Inst, NL-7500 AE Enschede, Netherlands
[2] Philips Semicond, Nijmegen, Netherlands
来源：
MICROELECTRONICS RELIABILITY | 2001年 / 41卷 / 03期
关键词：
D O I：
10.1016/S0026-2714(00)00240-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we analyzed, through experiments and 2-D simulations, the behavior under high reverse voltages of a double-diffused MOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching on of the parasitic bipolar structure and in the failure mechanism. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：395 / 405
页数：11
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