Island Thickness Effects for Stretchable InGaZnO Thin Film Transistors on Wavy-Dimensional Elastomer Substrate

被引：0
|
作者：
Jang, Hye-Won [1 ]
Yoon, Sung-Min [1 ]
机构：
[1] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Seoul, South Korea
来源：
2019 IEEE INTERNATIONAL FLEXIBLE ELECTRONICS TECHNOLOGY CONFERENCE (IEEE IFETC 2019) | 2019年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the In-Ga-Zn-O TFTs with mechanical stretchability, which were fabricated on 1.2-mu m-thick polyimide (PI) film/pre-strained elastomer with a wavy-dimensional structures. We evaluate the stretchable characteristics of the fabricated devices under various strain conditions and cyclic stretching test. Excellent electrical and mechanical stabilities of highly stretchable TFTs prepared on 0.9-mu m-thick PI island are successfully demonstrated.
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