Effects of Substrate Heating on the Amorphous Structure of InGaZnO Films and the Electrical Properties of Their Thin Film Transistors

被引：10

作者：

Moon, Mi Ran ^{[2
,3
]}

Na, Sekwon ^{[1
]}

Jeon, Haseok ^{[1
]}

An, Chee-Hong ^{[1
]}

Park, Kyung ^{[1
]}

Jung, Donggeun ^{[2
,3
]}

Kim, Hyoungsub ^{[1
]}

Lee, Young-Boo ^{[4
]}

Lee, Hoo-Jeong ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Dept Phys, Inst Basic Sci, Suwon 440746, South Korea

[3] Sungkyunkwan Univ, Brain Korea Phys Res Div 21, Suwon 440746, South Korea

[4] Korea Basic Sci Inst, Jeonju 561756, South Korea

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 11期

关键词：

TEMPERATURE; FABRICATION;

D O I：

10.1143/APEX.3.111101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study examines the effects of substrate heating on the amorphous structure of InGaZnO4 (IGZO) films and the device performance of transistors produced from these films. By combining high-resolution transmission electron microscopy (HRTEM) and energy-filtered selected area electron diffraction (EF-SAED), we found that the atomic order improved significantly for the IGZO films deposited on a heated substrate, compared to the samples deposited on an unheated substrate and postannealed. Measurement of the electrical characteristics of the transistors discloses that the amorphous structure changes induced by substrate heating profoundly influenced the overall device performance, leading to a substantial increase in electron mobility. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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