Island Thickness Effects for Stretchable InGaZnO Thin Film Transistors on Wavy-Dimensional Elastomer Substrate

We report on the In-Ga-Zn-O TFTs with mechanical stretchability, which were fabricated on 1.2-mu m-thick polyimide (PI) film/pre-strained elastomer with a wavy-dimensional structures. We evaluate the stretchable characteristics of the fabricated devices under various strain conditions and cyclic stretching test. Excellent electrical and mechanical stabilities of highly stretchable TFTs prepared on 0.9-mu m-thick PI island are successfully demonstrated.