Low energy electron diffraction and photoelectron spectroscopy study of GaAs(113)A and ((113)over-bar)B surfaces prepared by molecular beam epitaxy and by ion bombardment and annealing

被引：17
|
作者：
Setzer, C [1 ]
Platen, J [1 ]
Ranke, W [1 ]
Jacobi, K [1 ]
机构：
[1] Max Planck Inst Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
来源：
SURFACE SCIENCE | 1999年 / 419卷 / 2-3期
关键词：
angle resolved photoemission; gallium arsenide; high index single crystal surfaces; low energy electron diffraction; molecular beam epitaxy; soft X-ray photoelectron spectroscopy (using synchrotron radiation); surface structure; morphology; roughness; and topography;
D O I：
10.1016/S0039-6028(98)00807-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The GaAs (113)A and ((113) over bar)B surfaces were prepared by molecular beam epitaxy (MBE) and ion bombardment and annealing (IBA). The surfaces were investigated in situ by means of low-energy electron diffraction and surface core-level (SCL) spectroscopy. Both orientations show 1 x 1 reconstructions after preparation with IBA. For the (113)A face a stable, 8 x 1 reconstructed surface was prepared by MBE. SCL shifts (SCLSs) are observed for As 3d (+0.53 eV) and Ga 3d (-0.46, +0.36 eV) which support a recently proposed model by Wassermeier et al. [Phys. Rev. B 51 (1995) 14721]. The (113)A(8 x 1) surface exhibits surface resonances ar -1.0 and -3.8 eV below the valence band maximum. The dispersion of these resonances is only weak and does not follow the symmetry of the reconstructed surface. The {(113) over bar}B surface shows {(111) over bar}B and {110} facets after preparation with MBE. This is confirmed by SCLSs for As 3d (-0.63, +0.57 eV). (C) 1999 Elsevier Science B.V. All rights reserved.
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页码：291 / 302
页数：12
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