Low energy electron diffraction and photoelectron spectroscopy study of GaAs(113)A and ((113)over-bar)B surfaces prepared by molecular beam epitaxy and by ion bombardment and annealing

The GaAs (113)A and ((113) over bar)B surfaces were prepared by molecular beam epitaxy (MBE) and ion bombardment and annealing (IBA). The surfaces were investigated in situ by means of low-energy electron diffraction and surface core-level (SCL) spectroscopy. Both orientations show 1 x 1 reconstructions after preparation with IBA. For the (113)A face a stable, 8 x 1 reconstructed surface was prepared by MBE. SCL shifts (SCLSs) are observed for As 3d (+0.53 eV) and Ga 3d (-0.46, +0.36 eV) which support a recently proposed model by Wassermeier et al. [Phys. Rev. B 51 (1995) 14721]. The (113)A(8 x 1) surface exhibits surface resonances ar -1.0 and -3.8 eV below the valence band maximum. The dispersion of these resonances is only weak and does not follow the symmetry of the reconstructed surface. The {(113) over bar}B surface shows {(111) over bar}B and {110} facets after preparation with MBE. This is confirmed by SCLSs for As 3d (-0.63, +0.57 eV). (C) 1999 Elsevier Science B.V. All rights reserved.