Carbon nanotube quantum dots fabricated on a GaAs/AlGaAs two-dimensional electron gas substrate

被引:17
|
作者
Tsukamoto, T
Moriyama, S
Tsuya, D
Suzuki, M
Yamaguchi, T
Aoyagi, Y
Ishibashi, K
机构
[1] RIKEN, Inst Phys & Chem Res, Adv Device Lab, Wako, Saitama 3510198, Japan
[2] Tokyo Inst Technol, Dept Informat Proc, Midori Ku, Yokohama, Kanagawa 2268503, Japan
关键词
D O I
10.1063/1.2077841
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single-wall carbon nanotube (SWCNT) quantum dots have been fabricated on a GaAs/AlGaAs two-dimensional electron gas (2DEG) substrate, and the single electron transport measurements have been carried out at 2.8 K and 22 mK with the 2DEG used as a gate. It was demonstrated that the gating by the 2DEG could be switched on and off by controlling a quantum point contact fabricated between the dot and the Ohmic contact to the 2DEG gate. The unique combination of the SWCNT dot and the 2DEG may open a door to realize flexible hybrid devices. (c) 2005 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 50 条
  • [41] PHOTOLUMINESCENCE FROM THE TWO-DIMENSIONAL ELECTRON-GAS AT GAAS ALGAAS SINGLE HETEROJUNCTIONS
    YANG, CH
    LYON, SA
    TU, CW
    APPLIED PHYSICS LETTERS, 1988, 53 (04) : 285 - 287
  • [42] Study of internal electric fields in AlGaAs/GaAs two-dimensional electron gas heterostructures
    Zamora-Peredo, L
    Guillen-Cervantes, A
    Rivera-Alvarez, Z
    López-López, M
    Rodríguez-Vázquez, AG
    Méndez-García, VH
    MICROELECTRONICS JOURNAL, 2003, 34 (5-8) : 521 - 523
  • [43] ac ballistic transport in a two-dimensional electron gas measured in GaAs/AlGaAs heterostructures
    Kang, SM
    Burke, PJ
    Pfeiffer, LN
    West, KW
    PHYSICAL REVIEW B, 2005, 72 (16)
  • [44] Optical properties of the two-dimensional electron gas in the N-AlGaAs/GaAs heterostructures
    Mokerov, VG
    Fedorov, YV
    Guk, AV
    Khabarov, YV
    DOKLADY AKADEMII NAUK, 1996, 348 (05) : 608 - 610
  • [45] FIELD IONIZED IMPURITY SCATTERING IN AN ALGAAS/GAAS TWO-DIMENSIONAL ELECTRON-GAS
    LIVINGSTONE, A
    TSUBAKI, K
    KAWASHIMA, M
    OKAMOTO, H
    KUMABE, K
    ELECTRONICS LETTERS, 1983, 19 (16) : 619 - 620
  • [46] Photoluminescence of InAs quantum dots coupled to a two-dimensional electron gas
    Luo, YH
    Wan, J
    Yeh, J
    Wang, KL
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (05) : 459 - 462
  • [47] Photoluminescence of InAs quantum dots coupled to a two-dimensional electron gas
    Y. H. Luo
    J. Wan
    J. Yeh
    K. L. Wang
    Journal of Electronic Materials, 2001, 30 : 459 - 462
  • [48] A NEW TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR FABRICATED ON UNDOPED ALGAAS-GAAS HETEROSTRUCTURE
    KATAYAMA, Y
    MORIOKA, M
    SAWADA, Y
    UEYANAGI, K
    MISHIMA, T
    ONO, Y
    USAGAWA, T
    SHIRAKI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03): : L150 - L152
  • [49] Spin coherence of the two-dimensional electron gas in a GaAs quantum well
    A. V. Larionov
    Semiconductors, 2015, 49 : 81 - 87
  • [50] Spin coherence of the two-dimensional electron gas in a GaAs quantum well
    Larionov, A. V.
    SEMICONDUCTORS, 2015, 49 (01) : 81 - 87