Carbon nanotube quantum dots fabricated on a GaAs/AlGaAs two-dimensional electron gas substrate

被引：17
|
作者：
Tsukamoto, T
Moriyama, S
Tsuya, D
Suzuki, M
Yamaguchi, T
Aoyagi, Y
Ishibashi, K
机构：
[1] RIKEN, Inst Phys & Chem Res, Adv Device Lab, Wako, Saitama 3510198, Japan
[2] Tokyo Inst Technol, Dept Informat Proc, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 07期
关键词：
D O I：
10.1063/1.2077841
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Single-wall carbon nanotube (SWCNT) quantum dots have been fabricated on a GaAs/AlGaAs two-dimensional electron gas (2DEG) substrate, and the single electron transport measurements have been carried out at 2.8 K and 22 mK with the 2DEG used as a gate. It was demonstrated that the gating by the 2DEG could be switched on and off by controlling a quantum point contact fabricated between the dot and the Ohmic contact to the 2DEG gate. The unique combination of the SWCNT dot and the 2DEG may open a door to realize flexible hybrid devices. (c) 2005 American Institute of Physics.
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页数：3
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