Experimental demonstration of enhancement mode GaN MOSFETs

被引：12
|
作者：
Huang, W. [1 ]
Chow, T. P.
Khan, T.
机构：
[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA
[2] Freescale Semicond, Tempe, AZ 85284 USA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 06期
关键词：
D O I：
10.1002/pssa.200674918
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the demonstration of enhancement-mode n-channel GaN high-voltage metal-oxide field-effect transistor (MOSFET) realized on both p- and n-GaN epilayer on sapphire substrates. These MOSFETs, with different gate geometries, shows good DC characteristics with world-best field-effect mobility of 167 cm(2)/V s and maximum blocking voltage of 940 V. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2064 / 2067
页数：4
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