Experimental study on 5 MeV proton irradiation of enhancement-mode GaN HEMT devices

被引：0
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作者：
Qiu, Yiwu [1 ]
Dong, Lei [1 ]
Yin, Yanan [1 ]
Zhou, Xinjie [1 ]
机构：
[1] China Electronics Technology Group Corporation No.58 Research Institute, Wuxi,214035, China
来源：
He Jishu/Nuclear Techniques | 2024年 / 47卷 / 12期
关键词：
D O I：
10.11889/j.0253-3219.2024.hjs.47.120503
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学科分类号：
摘要：
25
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