A high-performance enhancement-mode AlGaN/GaN HEMT

被引：3
|
作者：
Feng Zhihong [1 ]
Xie Shengyin [2 ]
Zhou Rui [1 ]
Yin Jiayun [1 ]
Zhou Wei [2 ]
Cai Shujun [1 ]
机构：
[1] Natl Key Lab Applicat Specif Integrated Circuit, Shijiazhuang 050051, Hebei, Peoples R China
[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2010年 / 31卷 / 08期
基金：
中国国家自然科学基金;
关键词：
enhancement-mode; AlGaN/GaN HEMT; fluorine plasma; threshold voltage; numerical simulation;
D O I：
10.1088/1674-4926/31/8/084001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An enhancement-mode AlGaN/GaN HEMT with a threshold voltage of 0.35 V was fabricated by fluorine plasma treatment. The enhancement-mode device demonstrates high-performance DC characteristics with a saturation current density of 667 mA/mm at a gate bias of 4 V and a peak transconductance of 201 mS/mm at a gate bias of 0.8 V. The current-gain cut-off frequency and the maximum oscillation frequency of the enhancement-mode device with a gate length of 1 mu m are 10.3 GHz and 12.5 GHz, respectively, which is comparable with the depletion-mode device. A numerical simulation supported by SIMS results was employed to give a reasonable explanation that the fluorine ions act as an acceptor trap center in the barrier layer.
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页数：3
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