Characterization of InP:Zn layers by photoluminescence and photoelectrochemical C-V profiling

被引：0
|
作者：
Andrievski, VF [1 ]
Gushchinskaya, EV [1 ]
Emelyanenko, YS [1 ]
Malyshev, SA [1 ]
机构：
[1] Natl Acad Sci, Inst Elect, Minsk 220090, BELARUS
来源：
HETEROSTRUCTURE EPITAXY AND DEVICES: HEAD '97 | 1998年 / 48卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：147 / 150
页数：4
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