EXACT FORMULATION OF MOS C-V PROFILING

被引:4
|
作者
BARTELINK, DJ [1 ]
TREMAIN, RE [1 ]
机构
[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
关键词
D O I
10.1109/T-ED.1979.19708
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1831 / 1831
页数:1
相关论文
共 50 条
  • [1] MOS capacitor C-V Curves
    Feng, Lu
    Chen, Jihua
    2005 International Symposium on Computer Science and Technology, Proceedings, 2005, : 506 - 513
  • [2] Dynamic C-V characteristics of MOS structures
    Sakalauskas, S.
    Vaitonis, Z.
    LITHUANIAN JOURNAL OF PHYSICS, 2007, 47 (04): : 451 - 456
  • [3] On C-V profiling near an isotypic heterojunction
    Zubkov, VI
    Melnik, MA
    Solomonov, AV
    SEMICONDUCTORS, 1998, 32 (01) : 52 - 53
  • [4] Electrochemical C-V profiling of silicon structure
    Kinder, R
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1997, 164 (02): : 785 - 789
  • [5] C-V PROFILING OF STEEP DOPANT DISTRIBUTIONS
    LEHOVEC, K
    SOLID-STATE ELECTRONICS, 1984, 27 (12) : 1097 - 1105
  • [6] On C-V profiling near an isotypic heterojunction
    V. I. Zubkov
    M. A. Melnik
    A. V. Solomonov
    Semiconductors, 1998, 32 : 52 - 53
  • [7] C-V PROFILING OF GAAS FET FILMS
    WILEY, JD
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1317 - 1324
  • [8] NONEQUILIBRIUM C-V CHARACTERISTICS OF MOS INVERSION REGION
    TSAO, KY
    LEENOV, D
    SOLID-STATE ELECTRONICS, 1976, 19 (01) : 27 - 30
  • [9] MOS transistors characterization by split C-V method
    Mileusnic, S
    Zivanov, M
    Habas, P
    2001 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOL 1 & 2, PROCEEDINGS, 2001, : 503 - 506
  • [10] C-V characterization of MOS capacitors in SOI structures
    Rustagi, SC
    Mohsen, ZO
    Chandra, S
    Chand, A
    SOLID-STATE ELECTRONICS, 1996, 39 (06) : 841 - 849