ELECTROLYTE FOR ELECTROCHEMICAL C-V PROFILING OF INP-BASED AND GAAS-BASED STRUCTURES

被引：6

作者：

FAUR, M ^{[1
]}

FLOOD, DJ ^{[1
]}

GORADIA, M ^{[1
]}

机构：

[1] CLEVELAND STATE UNIV, CLEVELAND, OH 44115 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期

关键词：

SEMICONDUCTOR ELECTROLYTE; ETCHING;

D O I：

10.1016/0921-5107(94)90083-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new electrolyte (UNIEL) based on HF, NH3F2, C9H14CIN, CH3COOH and o-H3PO4 has been developed for accurate EC-V net majority carrier concentration profiling of InP- and GaAs-based III-V semiconductors. The new electrolyte was tested with good results on heterostructures containing p- and n-type InP, GaAs,InGaAs and InGaAsP layers.

引用

页码：361 / 364

页数：4

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