CMOS active pixel sensor with variable dynamic range using a double-photodiode feedback structure

被引：0
|
作者：
Jo, Sung-Hyun [1 ]
Bae, Myunghan [1 ]
Jung, Joontaek [1 ]
Shin, Jang-Kyoo [1 ]
机构：
[1] Kyungpook Natl Univ, Sch Elect Engn, Taegu 702701, South Korea
来源：
2011 IEEE INTERNATIONAL INSTRUMENTATION AND MEASUREMENT TECHNOLOGY CONFERENCE (I2MTC) | 2011年
关键词：
CMOS image sensor; dynamic range; double-photodiode structure; active pixel sensor;
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A double-photodiode feedback structure to extend the dynamic range (DR) of the CMOS active pixel sensor (APS) has been proposed in this paper. Since the proposed APS requires one additional photodiode and two additional nMOSFETs in comparison with a conventional 3-transistor (TR) APS, the size of pixel is slightly larger than that of conventional 3-TR APS. However, extension of the dynamic range is much easier than conventional methods by adjusting the reset voltage and photo current of the additional photodiode. The proposed APS exhibits a wide and variable dynamic range with high sensitivity at low illumination and low sensitivity at high illumination.
引用
收藏
页码：1468 / 1471
页数：4
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