Effect of Temperature on Performance of 5-nm Node Silicon Nanosheet Transistors for Analog Applications

This work investigates the effects of temperature on the performance of a 5-nm node N-channel Nanosheet Transistor (NST) for analog applications. A fully calibrated commercial TCAD platform is used for the device as well as mixed-mode circuit simulations. The range of temperature used in the study is from 250 to 450 K. The transconductance (g(m)) of the NST shows a change in the sign of its temperature coefficient (TC), from positive to negative, around a gate voltage of 0.52 V. The Output-conductance (g(ds)) and Early-voltage (V-EA) parameters increase with the increase in temperature. However, the Intrinsic-gain (A(v)), Transconductance-generation-efficiency (g(m)/I-DS), Unit-gain-frequency (f(T)), Gain-Frequency product (GFP), Transconductance-Frequency product (TFP), and Gain- Transconductance-Frequency product (GTFP) parameters are observed to deteriorate with the increasing temperature. For the increase in temperature from 250 to 450 K: the maximum g(m) value is seen to decrease from 228 mu S to 200 mu S; the g(ds) values increase from 24.6 mu S to 27.1 mu S; the early voltage (at V-GS = 400 mV) improves from 2.37 to 2.71 V; the f(T) value decreases from 568 GHz to 524 GHz; the A(v) value falls from 9.2 to 7.4; Discharge-time (t(d)) value improves from 9.45 ns to 8.11 ns; the g(m)/I-DS values degrade from 37.5 V- 1 to 22.4 V- 1; the GFP value falls from 5.22 THz to 3.86 THz.