HEMT statistical modeling using Monte Carlo method combined with principal components analysis

被引：0

作者：

Ciminelli, C ^{[1
]}

D'Orazio, A ^{[1
]}

De Sario, M ^{[1
]}

Petruzzelli, V ^{[1
]}

Prudenzano, F ^{[1
]}

机构：

[1] Politech Bari, Dipartimento Elettrotecn & Elettron, I-70125 Bari, Italy

来源：

MELECON 2000: INFORMATION TECHNOLOGY AND ELECTROTECHNOLOGY FOR THE MEDITERRANEAN COUNTRIES, VOLS 1-3, PROCEEDINGS | 2000年

关键词：

Monte Carlo method; Principal Components analysis; high electron mobility transistor;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

A statistical methodology is presented for the extraction of equivalent circuit parameters (ECP's) of high electron mobility transistors (HEMT). This methodology, based upon the Principal Component Analysis (PCA) combined with the Monte Carlo method, can be successfully employed for evaluating HEMT's reliability and their technological dispersion effects, too. Furthermore the method provides an efficient system to derive ECP's values when the measured ones are not available. Thanks to this procedure the device designer can gain a noticeable rid during the design.

引用

页码：806 / 809

页数：4

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