Fracture properties of hydrogenated amorphous silicon carbide thin films

被引：32
|
作者：
Matsuda, Y. [1 ]
King, S. W. [2 ]
Bielefeld, J. [2 ]
Xu, J. [2 ]
Dauskardt, R. H. [1 ]
机构：
[1] Stanford Univ, Stanford, CA 94305 USA
[2] Intel Corp, Hillsboro, OR 97006 USA
来源：
ACTA MATERIALIA | 2012年 / 60卷 / 02期
关键词：
Thin films; Fracture; Plasticity; Moisture-assisted cracking; Dielectrics; TRANSFORM-INFRARED-SPECTROSCOPY; CHEMICAL-VAPOR-DEPOSITION; SUBCRITICAL CRACK-GROWTH; LOW-DIELECTRIC-CONSTANT; STRESS-CORROSION; ELASTIC-MODULUS; BRITTLE SOLIDS; GLASS; MODEL; PROPAGATION;
D O I：
10.1016/j.actamat.2011.10.014
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The cohesive fracture properties of hydrogenated amorphous silicon carbide (a-SiC:H) thin films in moist environments are reported. Films with stoichiometric compositions (C/Si approximate to 1) exhibited a decreasing cohesive fracture energy with decreasing film density similar to other silica-based hybrid organic-inorganic films. However, lower density a-SiC:H films with non-stoichiometric compositions (C/Si approximate to 5) exhibited much higher cohesive fracture energy than the films with higher density stoichiometric compositions. One of the non-stoichiometric films exhibited fracture energy (similar to 9.5 J m(-2)) greater than that of dense silica glasses. The increased fracture energy was due to crack-tip plasticity, as demonstrated by significant pileup formation during nanoindentation and a fracture energy dependence on film thickness. The a-SiC:H films also exhibited a very low sensitivity to moisture-assisted cracking compared with other silica-based hybrid films. A new atomistic fracture model is presented to describe the observed moisture-assisted cracking in terms of the limited Si-O-Si suboxide bond formation that occurs in the films. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：682 / 691
页数：10
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