Fracture properties of hydrogenated amorphous silicon carbide thin films

被引：32

作者：

Matsuda, Y. ^{[1
]}

King, S. W. ^{[2
]}

Bielefeld, J. ^{[2
]}

Xu, J. ^{[2
]}

Dauskardt, R. H. ^{[1
]}

机构：

[1] Stanford Univ, Stanford, CA 94305 USA

[2] Intel Corp, Hillsboro, OR 97006 USA

来源：

ACTA MATERIALIA | 2012年 / 60卷 / 02期

关键词：

Thin films; Fracture; Plasticity; Moisture-assisted cracking; Dielectrics; TRANSFORM-INFRARED-SPECTROSCOPY; CHEMICAL-VAPOR-DEPOSITION; SUBCRITICAL CRACK-GROWTH; LOW-DIELECTRIC-CONSTANT; STRESS-CORROSION; ELASTIC-MODULUS; BRITTLE SOLIDS; GLASS; MODEL; PROPAGATION;

D O I：

10.1016/j.actamat.2011.10.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The cohesive fracture properties of hydrogenated amorphous silicon carbide (a-SiC:H) thin films in moist environments are reported. Films with stoichiometric compositions (C/Si approximate to 1) exhibited a decreasing cohesive fracture energy with decreasing film density similar to other silica-based hybrid organic-inorganic films. However, lower density a-SiC:H films with non-stoichiometric compositions (C/Si approximate to 5) exhibited much higher cohesive fracture energy than the films with higher density stoichiometric compositions. One of the non-stoichiometric films exhibited fracture energy (similar to 9.5 J m(-2)) greater than that of dense silica glasses. The increased fracture energy was due to crack-tip plasticity, as demonstrated by significant pileup formation during nanoindentation and a fracture energy dependence on film thickness. The a-SiC:H films also exhibited a very low sensitivity to moisture-assisted cracking compared with other silica-based hybrid films. A new atomistic fracture model is presented to describe the observed moisture-assisted cracking in terms of the limited Si-O-Si suboxide bond formation that occurs in the films. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：682 / 691

页数：10

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