Reshock behavior of silicon carbide

被引:8
|
作者
Dandekar, DP [1 ]
Reinhart, WD
Chhabildas, LC
机构
[1] AMSRL WM TD, Army Res Lab, Aberdeen Proving Ground, MD 21005 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源
JOURNAL DE PHYSIQUE IV | 2003年 / 110卷
关键词
D O I
10.1051/jp4:20030796
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The shear strength of a ceramic is an important material property which is indicative of its behaviour under impact loading condition. The brittle nature of ceramics suggest that impact loading of a ceramic attained due to subsonic impact could change the initial shear strength of the ceramic. If so, the subsequent behaviour of the ceramic may not be dependent on the the initial strength. Thus, it is necessary to determine the shear strength of a cermaic under single and multiple impacts. The present work determines the change in the shear strength of silicon carbide under a single shock, shock-reshock, and shock-release wave propagation, respectively. The material used in this work is marketed by CERCOM Inc. as SiC-B. The results of this work indicate that shear strength of SiC-B increases under shock-reshock.
引用
收藏
页码:827 / 831
页数:5
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