GaN crystal growth on an SiC substrate from Ga wetting solution reacting with NH3

被引：10

作者：

Tanaka, A ^{[1
]}

Funayama, Y ^{[1
]}

Murakami, T ^{[1
]}

Katsuno, H ^{[1
]}

机构：

[1] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 249卷 / 1-2期

关键词：

nucleation; liquid phase epitaxy; nitrides;

D O I：

10.1016/S0022-0248(02)02097-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new method of GaN growth from Ga solution with NH3 has been developed. The method is characterized by the use of a thin layer of Ga wetting solution formed on a rotating substrate and chemical reaction with NH3 at the solution surface. The growth experiments, performed at 980degreesC with NH3 supply rate of 9 seem for 30 h, resulted in the layer mode growth of about 4mum thickness on a part of Si-face of a 6H-SiC substrate. The thickness of wetting solution required for creating suitable super-saturation is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：59 / 64

页数：6

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