Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

被引：17

作者：

Gu, Jie ^{[1
,2
]}

Zhang, Qingzhu ^{[1
]}

Wu, Zhenhua ^{[1
,2
]}

Yao, Jiaxin ^{[1
,2
]}

Zhang, Zhaohao ^{[1
]}

Zhu, Xiaohui ^{[1
,2
]}

Wang, Guilei ^{[1
]}

Li, Junjie ^{[1
,2
]}

Zhang, Yongkui ^{[1
]}

Cai, Yuwei ^{[1
,2
]}

Xu, Renren ^{[1
,2
]}

Xu, Gaobo ^{[1
,2
]}

Xu, Qiuxia ^{[1
]}

Yin, Huaxiang ^{[1
,2
]}

Luo, Jun ^{[1
,2
]}

Wang, Wenwu ^{[1
,2
]}

Ye, Tianchun ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China

来源：

NANOMATERIALS | 2021年 / 11卷 / 02期

关键词：

gate-all-around; Si nanowire; cryo-CMOS; one-dimensional hole transport;

D O I：

10.3390/nano11020309

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A 16-nm-L-g p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.

引用

页码：1 / 11

页数：11

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