Effects of hydrostatic pressure on Raman scattering in Ge quantum dots

被引：12

作者：

Teo, KL ^{[1
]}

Qin, L

Noordin, IM

Karunasiri, G

Shen, ZX

Schmidt, OG

Eberl, K

Queisser, HJ

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

[2] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore

[3] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.63.121306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Raman scattering under hydrostatic pressure is used to investigate the phonon modes of self-organized Ge quantum dots (QD's) grown by solid source molecular-beam epitaxy. The pressure dependence of Ge-Ge phonon and Si acoustical-overtone (2TA) modes are studied from 0 to 67 kbar at room temperature. Our results show that the overlapping spectra of the Ge-Ge phonon and Si 2TA modes occur around 303 cm(-1) at ambient pressure which can be resolved at relatively low pressure of about 3 kbar. The linear pressure coefficient of Ge-Ge phonon mode in QD's is found to be 0.29 cm(-1)/kbar, which is slightly smaller than the corresponding quantity in bulk Ge.

引用

页数：4

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