Effects of hydrostatic pressure on Raman scattering in Ge quantum dots

被引：12
|
作者：
Teo, KL [1 ]
Qin, L
Noordin, IM
Karunasiri, G
Shen, ZX
Schmidt, OG
Eberl, K
Queisser, HJ
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore
[2] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
[3] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
来源：
PHYSICAL REVIEW B | 2001年 / 63卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.63.121306
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Raman scattering under hydrostatic pressure is used to investigate the phonon modes of self-organized Ge quantum dots (QD's) grown by solid source molecular-beam epitaxy. The pressure dependence of Ge-Ge phonon and Si acoustical-overtone (2TA) modes are studied from 0 to 67 kbar at room temperature. Our results show that the overlapping spectra of the Ge-Ge phonon and Si 2TA modes occur around 303 cm(-1) at ambient pressure which can be resolved at relatively low pressure of about 3 kbar. The linear pressure coefficient of Ge-Ge phonon mode in QD's is found to be 0.29 cm(-1)/kbar, which is slightly smaller than the corresponding quantity in bulk Ge.
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页数：4
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