Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on SrTiO3 substrates

被引：0
|
作者：
Lee, HN [1 ]
Senz, S [1 ]
Pignolet, A [1 ]
Hesse, D [1 ]
机构：
[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle Saale, Germany
来源：
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2001年 / 21卷 / 10-11期
关键词：
dielectric properties; ferroelectric properties; films; perovskites; X-ray methods;
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Non-c-axis-oriented SrBi2Ta2O9 (SBT) epitaxial thin films with (116)- and (103)-orientations have been grown on Nb-doped (011)- and (111)-oriented SrTiO3 (STO) substrates by pulsed laser deposition, respectively. Analyses of the X-ray diffraction pole figures revealed that the three-dimensional epitaxy orientation relationship SBT(001)parallel to STO(001); SBT[1 (1) over bar0]parallel to STO[110] is valid for both cases of SBT thin films, irrespective of STO orientations. The measured remanent polarizations (2P(r)) of (116)-oriented and (103)-oriented SBT films were 9.6 and 10.4 muC/cm(2), respectively, for a maximum applied electric field of 320 kV/cm. The dielectric constants of (116)- and (103)-oriented SBT were estimated as 155 and 189, respectively. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1565 / 1568
页数：4
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