Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on SrTiO3 substrates

被引：0
|
作者：
Lee, HN [1 ]
Senz, S [1 ]
Pignolet, A [1 ]
Hesse, D [1 ]
机构：
[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle Saale, Germany
来源：
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2001年 / 21卷 / 10-11期
关键词：
dielectric properties; ferroelectric properties; films; perovskites; X-ray methods;
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Non-c-axis-oriented SrBi2Ta2O9 (SBT) epitaxial thin films with (116)- and (103)-orientations have been grown on Nb-doped (011)- and (111)-oriented SrTiO3 (STO) substrates by pulsed laser deposition, respectively. Analyses of the X-ray diffraction pole figures revealed that the three-dimensional epitaxy orientation relationship SBT(001)parallel to STO(001); SBT[1 (1) over bar0]parallel to STO[110] is valid for both cases of SBT thin films, irrespective of STO orientations. The measured remanent polarizations (2P(r)) of (116)-oriented and (103)-oriented SBT films were 9.6 and 10.4 muC/cm(2), respectively, for a maximum applied electric field of 320 kV/cm. The dielectric constants of (116)- and (103)-oriented SBT were estimated as 155 and 189, respectively. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1565 / 1568
页数：4
相关论文
共 50 条
  • [21] Growth and characterization of non-c-axis-oriented SrBi2Ta2O9 epitaxial thin films on Si(100) substrates with SrRuO3 bottom electrodes
    Lee, HN
    Zakharov, D
    Senz, S
    Pignolet, A
    Hesse, D
    INTEGRATED FERROELECTRICS, 2001, 39 (1-4) : 1023 - 1030
  • [22] Thermal behavior in ferroelectric SrBi2Ta2O9 thin films
    Onodera, A
    Yoshio, K
    Myint, CC
    Tanaka, M
    Hironaka, K
    Kojima, S
    FERROELECTRICS, 2000, 241 (1-4) : 159 - 166
  • [23] Growth and microstructure of SrBi2Ta2O9 thin films
    Srinivas, S
    Katiyar, RS
    Kim, WJ
    Kircohefer, SW
    Horwitz, JS
    Chrisey, DB
    MULTICOMPONENT OXIDE FILMS FOR ELECTRONICS, 1999, 574 : 131 - 136
  • [24] Epitaxial growth of (001)-oriented and (116)-oriented SrBi2Ta2O9 thin films by chemical solution deposition method
    Kim, JH
    Ha, TJ
    Cheon, CI
    Lange, FF
    JOURNAL OF CRYSTAL GROWTH, 2001, 225 (2-4) : 366 - 371
  • [25] Orientation dependent ferroelectric properties of SrBi2Ta2O9 ferroelectric thin films
    Moon, SE
    Back, SB
    Kwun, SI
    Song, TK
    Yoon, JG
    PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II, 2001, : 933 - 936
  • [26] Epitaxial growth of SrBi2Ta2O9 on silicon
    Schumacher, J
    Martínez, JC
    Martin, F
    Maier, M
    Adrian, H
    Raiteri, R
    Butt, HJ
    FERROELECTRICS, 2001, 255 : 111 - 122
  • [27] Optimization of the growth of epitaxial SrBi2Ta2O9 thin films by pulsed laser deposition
    Lettieri, J
    Jia, Y
    Fulk, SJ
    Schlom, DG
    Hawley, ME
    Brown, GW
    THIN SOLID FILMS, 2000, 379 (1-2) : 64 - 71
  • [28] Orientation control of SrBi2Ta2O9 epitaxial thin films and their properties
    Nagahama, T.
    Manabe, T.
    Yamaguchi, I.
    Kumagai, T.
    Tsuchiya, T.
    Mizuta, S.
    Key Engineering Materials, 1999, 169 : 139 - 144
  • [29] Growth of epitaxial SrBi2Ta2O9 thin films by metalorganic chemical vapor deposition
    Ishikawa, K
    Saiki, A
    Funakubo, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4B): : 2102 - 2109
  • [30] Growth of epitaxial SrBi2Ta2O9 thin films by metalorganic chemical vapor deposition
    Ishikawa, Katsuyuki
    Saiki, Atsushi
    Funakubo, Hiroshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (5 B): : 2102 - 2109
12345