Epitaxial growth of (001)-oriented and (110)-oriented SrBi2Ta2O9 thin films

被引：72
|
作者：
Lettieri, J [1 ]
Jia, Y
Urbanik, M
Weber, CI
Maria, JP
Schlom, DG
Li, H
Ramesh, R
Uecker, R
Reiche, P
机构：
[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[2] Univ Maryland, Dept Mat & Nucl Engn, College Pk, MD 20742 USA
[3] Inst Crystal Growth, D-12489 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 20期
关键词：
D O I：
10.1063/1.122631
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial SrBi2Ta2O9 thin films have been grown with (001) and (110) orientations by pulsed laser deposition on (001) LaAlO3-Sr2AlTaO6 and (100) LaSrAlO4 substrates, respectively. Four-circle 2 4 x-ray diffraction and transmission electron microscopy reveal nearly phase pure epitaxial films. Minimization of surface mesh mismatch between the film and substrate (i.e., choice of appropriate substrate material and orientation) was used to stabilize the desired orientations and achieve epitaxial growth. (C) 1998 American Institute of Physics. [S0003-6951(98)02746-6].
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页码：2923 / 2925
页数：3
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